Fairchild Manuals

The FDMC2674 N-Channel UltraFET Trench MOSFET is a high efficiency power conversion application device with ultra low leakage, low ESR, low total and Miller gate charge. These devices are ideal for high frequency DC to DC converters.

FDMC2610 N-Channel UltraFET Trench® MOSFET is a power management MOSFET from Fairchild Semiconductor Corporation with a maximum voltage of 200V, a maximum current of 9.5A, and a maximum resistance of 200mΩ. It has a low profile and is RoHS compliant.

FDMC2523P P-Channel QFET® is a P-channel MOSFET produced by Fairchild Semiconductor Corporation. It features low rDS(on), low Crss, fast switching, low gate charge, and improved dv/dt capability. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

FDMC2514SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM is an N-channel power transistor with extremely low RDS(on), supporting a maximum voltage of 25V and a current of 40A.

This document provides the absolute maximum ratings, electrical characteristics, and thermal characteristics of the MMSD3070 small signal diode from Fairchild Semiconductor Corporation. The diode has a maximum repetitive reverse voltage of 200V and an average rectified forward current of 200mA. Additionally, the document includes parameters such as power dissipation, thermal resistance, breakdown voltage, forward voltage, reverse current, total capacitance, and reverse recovery time of the product.

This document provides information about the absolute maximum ratings and electrical characteristics of the MMSD4148 model product from Fairchild Semiconductor. The product features a compact surface mount package with a power dissipation of 400 milliwatts, high breakdown voltage, and fast switching speed.

This document describes a surface mount package device with high breakdown voltage and fast switching speed. It has a compact size and high power dissipation capability. In addition, the device has low capacitance and fast reverse recovery time.

The FDMC86320 N-Channel Power Trench® MOSFET is a N-channel MOSFET from Fairchild Semiconductor Corporation. This device features low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance, and is suitable for applications such as DC/DC converters, motor bridge switches and synchronous rectifiers

FDMC86324 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor Corporation. The rated voltage is 80 V, maximum current is 20 A, and the on-state resistance is 23 mΩ. The features of this device include low profile (1 mm max in Power 33), 100% UIL testing and RoHS compliance.

The FDMC8651 is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor Corporation. It features low resistance and low gate resistance, and is suitable for DC/DC converters, synchronous rectifiers, etc.

This document describes the features and characteristics of FDMC86520L N-Channel Power Trench® MOSFET, including maximum on-resistance, performance at low and high voltages and currents.

FDMC8854 is a N-Channel Power Trench® MOSFET from Fairchild Semiconductor with a low rDS(on), low profile, and RoHS compliance.

FDMC8878 N-Channel Power Trench® MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applications.

The FDMC8882 N-Channel Power Trench® MOSFET is a N-channel power MOSFET produced by Fairchild Semiconductor Corporation. It has extremely low on-state resistance and is suitable for power management and load switching applications commonly used in notebook computers and portable battery packs.

FDMC8884 N-Channel Power Trench® MOSFET is a 30V, 15A, 19mΩ power tube. It is manufactured using Fairchild Semiconductor's advanced Power Trench® process, which has been specially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.