The document describes the FQD2N100/FQU2N100 as an N-Channel enhancement mode power field effect transistor manufactured using Fairchild's proprietary planar stripe DMOS technology. Key features include a 1.6A continuous drain current, 1000V breakdown voltage, and low on-state resistance of 9 ohms at VGS=10V.
| Drain-Source Voltage (VDSS) | 1000 V |
|---|---|
| Continuous Drain Current (ID) at TC=25°C | 1.6 A |
| On-Resistance (RDS(on)) @ VGS=10V | 9 Ω |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Types | I-PAK (FQU Series), D-PAK (FQD Series) |
These devices are well suited for electronic lamp starter and ballast.
The maximum continuous drain current is 1.6 A when the case temperature is 25°C.
The absolute maximum gate-source voltage is ±30 V.