This is a product manual that introduces the features of FQD2N60C/FQU2N60C, including RDS(on) = 4.7Ω @VGS = 10 V, low gate charge (typical 8.5 nC), low Crss (typical 4.3 pF), fast switching, 100% avalanche tested, improved dv/dt capability, etc.
This document is a datasheet for the Fairchild Semiconductor FQD2N60C and FQU2N60C, which are 600V N-Channel enhancement mode power field effect transistors. Produced using proprietary planar stripe DMOS technology, these devices are designed for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts. Key features include low gate charge, low Crss, fast switching, and 100% avalanche testing.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (25°C) | 1.9 A |
| Continuous Drain Current (100°C) | 1.14 A |
| Pulsed Drain Current | 7.6 A |
| Power Dissipation (Ta = 25°C) | 25 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | D-PAK |
The maximum continuous drain current is 1.9 A when the temperature is 25°C.
The maximum drain-source voltage rating is 600 V.
The operating and storage temperature range is from -55 to +150 °C.