FQP17P10 is a 100V P-Channel MOSFET manufactured by Fairchild Semiconductor with low gate charge, low Crss and fast switching.
This document provides design specifications and electrical characteristics for the Fairchild FQP17P10, a P-Channel MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as audio amplifiers and DC/DC converters.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -16.5 A |
| On-Resistance | 0.192 Ω |
| Maximum Junction Temperature | 175°C |
The device supports a continuous drain current of -16.5 A at 25°C and -11.7 A at 100°C.
The device has a maximum junction temperature rating of 175°C.
The power dissipation is rated at 100 W when the ambient temperature is 25°C.