This document describes the features and characteristics of the FQP19N20C/FQPF19N20C QFET® 200V N-Channel MOSFET product. The product is produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies, and motor controls.
This document provides comprehensive technical specifications for the Fairchild Semiconductor FQP19N20C and FQPF19N20C devices. These are 200V N-Channel enhancement mode power field effect transistors produced using proprietary DMOS technology, designed to minimize on-state resistance and provide superior switching performance.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 19.0 A |
| Power Dissipation (Tc = 25°C) | 139 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case (FQP19N20C) | 0.9 C/W |
| Gate Threshold Voltage (Typical) | 2.0 to 4.0 V |
| Package Type | TO-220 / TO-220F |
The device can withstand a single pulsed avalanche energy of 433 mJ.
The on-resistance increases as the junction temperature rises from 25°C to 160°C.