This document describes the features and characteristics of the FQP27P06 60V P-Channel MOSFET product. It is produced using Fairchild's DMOS technology and has features such as low on-state resistance, fast switching, and high energy pulse withstand capability. It is suitable for low voltage applications.
This document provides a comprehensive technical overview of the Fairchild FQP27P06, a 60V P-Channel enhancement mode power field effect transistor. Produced using proprietary planar stripe DMOS technology, this device is designed for low voltage applications including automotive systems and DC/DC converters.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -27 A |
| Pulsed Drain Current | -108 A |
| Gate-Source Voltage | #25 V |
| Maximum Junction Temperature | +175 °C |
| On-Resistance (Typical) | 0.072 Ω |
The device operates and stores within a temperature range of -55 to +175 °C.