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FDMS2506SDC is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device uses dual cooling top side cooling PQFN package and has extremely low RDS(on) and high performance technology. Application scope includes synchronous rectifier for DC/DC converters, telecom secondary side rectification, and high end server/workstation Vcore low side MOSFET.
The FDMS2508SDC is a N-Channel MOSFET produced by Fairchild Semiconductor. This device uses an advanced PowerTrench® process and features extremely low rDS(on) and extremely low Junction-to-Ambient thermal resistance, making it ideal for DC/DC converters, telecom secondary side rectification, and high end server/workstation Vcore low side MOSFET applications.
This document describes the features and characteristics of FDMS2510SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM, including maximum on-resistance, high performance technology, SyncFET Schottky body diode, etc.
FDMS2572 is an N-Channel UltraFET Trench MOSFET with a maximum rDS(on) of 47mΩ at VGS=10V, ID=4.5A. It also features low Miller charge and optimized efficiency at high frequencies, making it ideal for high frequency DC to DC converters.
FDMS2672 N-Channel UltraFET Trench MOSFET is a 200V, 20A, 77mΩ MOSFET produced by Fairchild Semiconductor Corporation. This device has low Rds(on), low ESR, low total harmonic distortion and Miller gate charge, and is ideal for high frequency DC/DC conversion applications.
The FDMS2734 N-Channel UltraFET Trench® MOSFET is a MOSFET device from Fairchild Semiconductor Corporation. Its main features are low rDS(on), low ESR, low total and Miller gate charge, making it ideal for high frequency DC to DC converters.
FDMS3006SDC is an N-Channel MOSFET produced using Fairchild Semiconductor's advanced Power Trench® process. This device features low rDS(on) and high performance, making it suitable for applications such as synchronous rectifiers, secondary side rectification in communication equipment, and Vcore low side in high-end servers/workstations.
This datasheet provides detailed information on the characteristics, specifications, applications of FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM.
FDMS3500 N-Channel Power Trench® MOSFET is a high-performance MOSFET with 75V, 49A, 14.5m� characteristics, suitable for DC-DC conversion applications.
This document describes the features and characteristics of the FDMS3572 N-Channel UltraFET Trench® MOSFET, including maximum rDS(on), Miller charge, and optimized efficiency at high frequencies.
FDMS3600S is a dual N-channel MOSFET device produced by Fairchild Semiconductor Corporation. It has the characteristics of low switching loss, optimized circuit layout and low switch node ringing. This device can be applied to computing, communications, general purpose point of load, notebook VCORE and server.
The FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET is a dual N-channel MOSFET device produced by Fairchild Semiconductor Corporation. It has low on-resistance, low packaging inductance, low switching loss and other features.
The FDMS3606AS is a 30V asymmetric dual N-channel MOSFET with low inductance packaging, lower switching losses, and reduced circuit inductance. It is suitable for applications such as computing, communications, general purpose point of load, notebook VCORE, and server MOSFET.
