FQD20N06 / FQU20N06 60V N-Channel MOSFET is a high-performance power field effect transistor from Fairchild with low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability, suitable for low-voltage applications such as automotive, DC/DC converters
This document describes the FQD20N06 and FQU20N06, which are 60V N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 16.8 A |
| Maximum Junction Temperature | +150 °C |
| Total Gate Charge (Typical) | 11.5 nC |
The device operates and stores within a temperature range of -55 to +150 °C.