This document describes the FQD1N80 / FQU1N80 800V N-Channel MOSFET products, which are produced using Fairchild's proprietary technology. The products feature low on-state resistance, superior switching performance, and high energy pulse withstand capability, making them well suited for high efficiency switch mode power supplies.
This document provides technical specifications for the Fairchild Semiconductor FQD1N80 and FQU1N80 series of N-Channel MOSFETs. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 10 A |
| Pulsed Drain Current | 40 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 90 mJ |
| Power Dissipation (Ta = 25°C) | * 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device operates and stores within a temperature range of -55 to +150 °C.