The document introduces the characteristics of QFET, including brand, model and other information
This document provides design specifications for the FQP22N30, an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. The device is tailored to minimize on-state resistance and provide superior switching performance for high efficiency switching DC/DC converters and switch mode power supplies.
The datasheet details absolute maximum ratings, electrical characteristics, and typical characteristics including on-resistance, capacitance, and switching times. It also includes test circuit diagrams for gate charge, resistive switching, and unclamped inductive switching, along with package dimensions for the TO-220 case.
| Drain-Source Voltage | 300 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 21 A |
| On-Resistance | 0.162 Ohm |
| Package Type | TO-220 |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current at 25°C is 21 A.
The maximum drain-source voltage rating is 300 V.
The operating and storage temperature range is -55 to +150 °C.