FQA90N08 is a 80V N-channel MOSFET with low on-state resistance, high switching speed, 100% avalanche tested and improved dv/dt capability.
This document provides design specifications and electrical characteristics for the Fairchild FQA90N08 MOSFET. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key features include a maximum continuous drain current of 90A, a breakdown voltage of 80V, and low gate charge typical values. It is well-suited for low voltage applications such as automotive systems, high efficiency DC/DC converters, and DC motor control.
| Continuous Drain Current (Tj = 25°C) | 90 A |
|---|---|
| Package Type | TO-3PN |
The maximum continuous drain current at a junction temperature of 25°C is 90 A.
The typical total gate charge is 84 nC, and the typical reverse transfer capacitance (Crss) is 200 pF.
Yes, the devices are 100% avalanche tested.