This document mainly introduces the features and advantages of QFET QFET QFET QFET
This document is a technical datasheet for the Fairchild Semiconductor FQA55N25 device. It describes an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high efficiency switching DC/DC converters and switch mode power supplies.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 55 A |
| On-Resistance | 0.049 @Vgg = 10 V |
| Gate Charge (Typical) | 140 nC |
| Reverse Transfer Capacitance (Typical) | 125 pF |
| Operating Temperature Range | -55 to +150 °C |
The FQA55N25 can withstand a single pulsed avalanche energy of up to 1000 mJ.