This document describes the features and characteristics of Fairchild's FQA65N20 QFET TM FQA65N20 200V N-Channel MOSFET, including low on-state resistance, superior switching performance, and reliability under high energy pulses. These devices are suitable for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply, and motor control.
This document is a datasheet for the Fairchild FQA65N20, an N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters, and motor control applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 65 A |
| On-Resistance | 0.0322 Ω |
| Gate Charge | 170 nC |
| Reverse Transfer Capacitance | 90 pF |
| Operating Temperature Range | -55 to +150 °C |
The device can withstand a single pulsed avalanche energy of up to 1010 mJ.
The device operates and stores within a temperature range of -55 to +150 °C.