The FQA8N100C 1000V N-Channel MOSFET is a low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability MOSFET.
This document provides the design specifications and final data for the FQA8N100C, an 8A, 1000V N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe, DMOS technology, the device is optimized for high-efficiency switched mode power supplies with low on-state resistance and fast switching capabilities.
The datasheet outlines absolute maximum ratings, including a drain-source voltage of 1000V and a maximum junction temperature of 150°C. It also details electrical characteristics such as input capacitance, reverse transfer capacitance, and switching times, along with typical performance characteristics illustrated through various graphs.
| Drain-Source Voltage | 1000 V |
|---|---|
| On-Resistance | 1.45 Ω |
| Gate Charge (Typical) | 53 nC |
| Reverse Transfer Capacitance (Typical) | 16 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.56 °C/W |
The maximum drain-source voltage is 1000 V.
The typical on-state resistance is 1.45 Ω at VGS = 10 V.
The device operates and stores in a temperature range of -55 to +150 °C.