The document introduces QFET, a novel power device for power electronic systems. QFET has the advantages of high switching speed, low on-resistance, high breakdown voltage and wide bandgap, which makes it promising for wide application in power electronic systems.
This document is a datasheet for the Fairchild Semiconductor FQA70N15, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, and DC motor control.
| Drain-Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 70 A |
| Continuous Drain Current (Tj = 100°C) | 50 A |
| Pulsed Drain Current | 280 A |
| Gate-Source Voltage | -25 V |
| Single Pulsed Avalanche Energy | 1000 mJ |
| Power Dissipation (Tc = 25°C) | 330 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction-to-Case | 0.45 °C/W |
| Thermal Resistance, Case-to-Sink | 0.24 °C/W |
The maximum junction temperature rating is 175°C.
The typical on-state resistance (Rds(on)) is 0.028 Ω at Vgs = 10 V.
The typical total gate charge is 135 nC.