This document mainly introduces the characteristics and features of FQD1N60C / FQU1N60C 600V N-Channel MOSFET.
This document is a datasheet for the Fairchild Semiconductor FQD1N60C / FQU1N60C, a 600V N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (25°C) | 1A |
| Pulsed Drain Current | 4A |
| On-Resistance | 11.5 Ω |
| Gate Charge (Typical) | 4.8nC |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-252 (DPAK) |
The maximum drain-source voltage is 600 V.
The typical on-state resistance is 11.5 ohms at VGS = 10 V.
The operating and storage temperature range is from -55 to +150 °C.