This document describes the features and characteristics of the FQA70N10 N-Channel MOSFET product produced by Fairchild Semiconductor International. These products are made using advanced DMOS technology, which offers low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
This document is a technical datasheet for the Fairchild Semiconductor FQA70N10, an N-Channel enhancement mode power MOSFET. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for low voltage applications such as audio amplifiers, high efficiency DC/DC converters, and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 70 A |
| Pulsed Drain Current | 280 A |
| Maximum Junction Temperature | +175 °C |
| On-Resistance (Typical) | 0.023 Ohms |
| Package Type | TO-3PN |
The maximum junction temperature rating is 175°C.
Yes, the devices are 100% avalanche tested.