FQA62N25C is a 250V N-channel MOSFET produced by Fairchild. Its features are RDS(on) = 0.035Ω @VGS = 10 V, low gate charge, low Crss, fast switching, 100% avalanche testing and improved dv/dt capability.
This document provides the design specifications and electrical characteristics for the FQA62N25C N-Channel MOSFET. Produced using Fairchild's proprietary planar DMOS technology, the device is tailored to minimize on-state resistance and provide superior switching performance for high-efficiency DC/DC converters and switch-mode power supplies.
The datasheet details absolute maximum ratings, electrical characteristics, and typical performance curves. Key features include a low on-resistance of 0.0352 Ω, low gate charge, and 100% avalanche testing. It also includes mechanical dimensions for the TO-3PN package and standard legal disclaimers regarding product status and life support policies.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (25°C) | 62 A |
| On-Resistance | 0.0352 Ω |
| Package Type | TO-3PN |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current at 25°C is 62 A.
The on-state resistance is 0.0352 Ω when Vgs is 10 V.
Yes, the device is 100% avalanche tested.