This document describes the features and characteristics of FQH90N15 / FQA90N15 N-Channel Power MOSFET, including 90A current, 150V voltage, low RDS(on) value, low gate charge and Crss value, fast switching speed, 100% avalanche tested, improved dv/dt capability, etc.
The document provides a comprehensive overview of the FQH90N15 and FQA90N15 N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology and are designed for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, and DC motor control. Key features include low gate charge, fast switching, and improved dv/dt capability.
| Drain-Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 90 A |
| Continuous Drain Current (Tj = 100°C) | 63.5 A |
| Pulsed Drain Current | 360 A |
| Gate-Source Voltage | +25 V |
| Single Pulsed Avalanche Energy | 1400 mJ |
| Power Dissipation (Tj = 25°C) | 375 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction-to-Case | 0.4 °C/W |
| Total Gate Charge | 220 nC (Typ) |
The devices are available in TO-247 and TO-3PN packages.
The maximum junction temperature rating is 175°C.
They are well suited for audio amplifiers, high efficiency switching for DC/DC converters, and DC motor control.