Fairchild Manuals

The FDP8447L is a N-Channel MOSFET produced by Fairchild Semiconductor. It uses PowerTrench technology to deliver low rDS(on), optimized BVDSS capability and fast switching. It is suitable for applications such as inverters and power supplies.

The FDP8440 is a 40V, 277A, 2.2mΩ N-channel PowerTrench® MOSFET. Its features are RDS(on) = 1.64mΩ (typ.) @ VGS = 10V, ID = 80A, Qg(tot) = 345nC (typ.) @ VGS = 10V, low Miller charge, low QRR body diode, UIS capability (single pulse and repetitive pulse), RoHS compliant. It is suitable for automotive engine control, powertrain management, motors, solenoids, electronic steering, integrated starter/ alternator, distributed power architectures and VRMs, and primary switch for 12V systems.

FDP80N06 is a N-channel enhancement mode power field effect transistor produced by Fairchild. Its features are RDS(on) = 8.5mΩ (Typ.)@ VGS = 10V, ID = 40A, low gate charge(Typ. 57nC), low Crss(Typ. 145pF), fast switching, improved dv/dt capability and RoHS compliant.

FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET are N-channel enhancement mode power field effect transistors produced by Fairchild Semiconductor Corporation. The device is produced using Fairchild's proprietary planar stripe DOMS technology and has low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche testing, improved dv/dt capability, ESD improved capability and RoHS compliance.

FDP7N50/FDPF7N50 500V N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor produced by Fairchild. It features 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V, low gate charge (typical 12.8 nC), low Crss (typical 9 pF), fast switching, 100% avalanche tested, and improved dv/dt capability.

FDP75N08A is a 75V N-Channel MOSFET with a rated current of 75A and a rated voltage of 75V. It has a fast switching speed and low on-state resistance and gate capacitance.

This document describes the features and characteristics of the FDP65N06 60V N-Channel MOSFET product released by Fairchild Semiconductor Corporation in June 2006. It includes 65A current, 60V voltage, low gate charge, fast switching, and improved dv/dt capability.

This application note presents practical step-by-step design considerations for a Boundary-Conduction-Mode (BCM) Power-Factor-Correction (PFC) converter employing Fairchild PFC controller, FAN7930. It includes designing the inductor and Zero-Current- Detection (ZCD) circuit, selecting the components, and closing the control loop.

This document describes the features and characteristics of the FDS6675 single-channel, logic level, PowerTrenchTM MOSFET released in October 1998.

FDS6673BZ is a P-channel MOSFET produced by Fairchild Semiconductor using the advanced Power Trench process. It has extremely low rDS(on) and is suitable for notebook computers and portable battery packs.

FDS6670AS is a 30V N-channel synchronous DC:DC power supply dedicated MOSFET with low RDS(ON), low gate charge, integrated Schottky diode, suitable for DC/DC converters and low side notebook computers

FDS6670A is a N-Channel Logic Level MOSFET produced by Fairchild Semiconductor Corporation. It is suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.

This document describes the features and characteristics of the FDS6630A N-Channel Logic Level PowerTrenchTM MOSFET. This MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, which minimizes on-state resistance and provides superior switching performance. It is suitable for low voltage and battery powered applications that require low power loss and fast switching.

This document is a specification for the FDS6614A MOSFET chip, which can be used in various circuit designs.