Fairchild Manuals

The FDS6612A is a single N-channel logic level MOSFET produced by Fairchild Semiconductor using PowerTrench process, with extremely low RDS(ON) and superior switching performance. These devices are suitable for low voltage and battery powered applications requiring low in-line power loss and fast switching.

The FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET is a high performance MOSFET device produced by Fairchild Semiconductor Corporation. It is suitable for applications such as load switches, battery protection and power management.

FDS6575 is a P-channel MOSFET from Fairchild Semiconductor with a 2.5V rating and a maximum current of -10A. It has low gate charge and extremely low RDS(ON). It is suitable for power management, load switching and battery protection applications.

This document describes the features and characteristics of the FDS6574A 20V N-Channel PowerTrench MOSFET, which is specifically designed to improve the overall efficiency of DC/DC converters.

This document describes the features and characteristics of the FDS6570A N-Channel MOSFET. The MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, which minimizes on-state resistance and provides superior switching performance. It is suitable for low voltage and battery powered applications.

This document describes the features and characteristics of Fairchild Semiconductor's FDS6375 P-Channel 2.5V specified PowerTrench MOSFET. The product is optimized for power management applications with a wide range of gate drive voltage (2.5V-8V).

The FDS6298 is a 30V N-Channel Fast Switching PowerTrench MOSFET from Fairchild Semiconductor Corporation. It is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The device has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDS6294 is a N-channel fast switching power MOSFET designed by Fairchild Semiconductor Corporation. Its features include low gate charge, low RDS(ON) and fast switching speed. Applications include DC/DC converters, power management and load switches.

The FDS5690 is a 60V N-Channel PowerTrench MOSFET with low RDS(on) and fast switching speed. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

This document introduces the datasheet of FDS5680 device, including the device's package size, pin arrangement, maximum working voltage, maximum working current, maximum power dissipation, working temperature range, etc.

FDS5672 N-Channel PowerTrench® MOSFET 60V, 12A, 10mΩ is a low power, high performance MOSFET with low gate charge, high power and current handling capability, suitable for DC/DC converters and other applications.

This document describes the absolute maximum ratings of an electronic component, including voltage, current, and temperature parameters.

FDS4935BZ is a dual channel P-Channel PowerTrench MOSFET with fast switching speed and low gate charge, which can be used in DC/DC converters, synchronous or conventional switching PWM controllers and battery chargers.

This document introduces Fairchild Semiconductor's FDS4935A Dual 30V P-Channel PowerTrench MOSFET. It is based on the advanced PowerTrench process and is suitable for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). It features low on-resistance, low gate charge, fast switching speed, and high power and current handling capability.

This document describes the features and characteristics of the dual N- and P-Channel enhancement mode power field effect transistors produced by Fairchild Semiconductor. These transistors are made using the PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. They are suitable for applications such as inverters and power supplies.