This is a PDF document about FQD10N20C / FQU10N20C 200V N-Channel MOSFET. The document describes the features and characteristics of these N-Channel enhancement mode power field effect transistors, including low on-state resistance, superior switching performance, and ability to withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies, and motor controls.
This document is a technical datasheet for Fairchild Semiconductor's FQD10N20C and FQU10N20C N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance for high efficiency switching DC/DC converters and motor controls.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including graphs for on-resistance, capacitance, and thermal response. It also details package dimensions for the TO-252 (DPAK) and TO-263 (DPAK) packages.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 7.8 A |
| Continuous Drain Current (Tc = 100°C) | 5.0 A |
| Power Dissipation (Tc = 25°C) | 50 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 25 °C/W |
| Total Gate Charge | 20 nC (Typ) |
| Package Weight (TO-252) | 0.33 g |
The maximum drain-source voltage is 200 V.
The continuous drain current at 25°C is 7.8 A.
The devices are available in TO-252 (DPAK) and TO-263 (DPAK) packages.