The document describes the FQD13N10L / FQU13N10L, which are N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as high efficiency DC/DC converters and DC motor control. This manual is written in Chinese.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 10 A |
| Total Gate Charge (Typical) | 8.7 nC |
| Reverse Transfer Capacitance (Typical) | 20 pF |
The maximum continuous drain current is 10 A when the case temperature is 25°C.
The maximum power dissipation is 40 W when the ambient temperature is 25°C.
The maximum gate-source voltage rating is ± 20 V.