This product is a P-channel enhancement mode power field effect transistor with low on-state resistance and fast switching.
The document describes the FQD11P06/FQU11P06 series of P-Channel enhancement mode power MOSFETs produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching in portable products.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | -9.4 A |
| Power Dissipation (Ta = 25°C) | * 25 Ww |
| Operating and Storage Temperature Range | -55 to +150 °c |
| Thermal Resistance, Junction-to-Case | = 3.28 °CAN |
The maximum power dissipation is 38 W when the case temperature is 25°C.
The device operates and can be stored within a temperature range of -55 to +150 °C.