This document describes the features and characteristics of the FQD12N20L / FQU12N20L 200V logic N-channel MOSFETs, including low on-state resistance, fast switching performance, and high energy pulse withstand capability. These devices are suitable for high efficiency switching DC/DC converters, switch mode power supplies, motor control, and other applications.
This document provides technical specifications and characteristics for the Fairchild Semiconductor FQD12N20L and FQU12N20L, which are 200V logic N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance suitable for high efficiency DC/DC converters and motor control applications.
The datasheet details absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters such as capacitance and gate charge, and thermal properties. It also includes typical characteristic curves illustrating behavior under various conditions and provides mechanical dimensions for the TO-252 (DPAK) and D-Pak packages.
| Drain-Source Voltage (Vdss) | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 9.0 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-252 (DPAK) |
Yes, the document states that these devices are RoHS Compliant.
The device operates and stores within a temperature range of -55 to +150 °C.