FQD17P06 / FQU17P06 is a 60V P-Channel MOSFET produced by Fairchild with excellent switching performance and low on-state resistance.
This document describes the Fairchild FQD17P06, a 60V P-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is optimized to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 12 A |
| Power Dissipation (Ta = 25°C) | * 2.5 W |
| Operating and Storage Temperature Range | -55 to +150 °c |
| Total Gate Charge | 27 nC (Max) |