This product is a N-Channel MOSFET with model FQD13N10 / FQU13N10. It is produced using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, fast switching speed, and is suitable for low voltage applications such as audio amplifier, DC/DC converter, and DC motor control.
The document describes the Fairchild FQD13N10 and FQU13N10 N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. This manual is written in Chinese.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (25°C) | 10 A |
| On-Resistance | 0.18 Ω |
| Gate Charge (Typical) | 12 nC |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-252 (DPAK) / I-PAK |
The device supports a continuous drain current of 10 A when the case temperature is 25°C.
The FQD13N10 / FQU13N10 can withstand a single pulsed avalanche energy of 95 mJ.
The device operates and can be stored within a temperature range of -55 to +150 °C.