The FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET is an enhancement mode power field effect transistor produced by Fairchild. It has the advantages of low on-state resistance, excellent switching performance and high energy pulse resistance. It is suitable for low-voltage applications such as automobiles, DC/DC converters and DC motor control.
This document is a datasheet for Fairchild Semiconductor's FQD17N08L and FQU17N08L N-Channel enhancement mode power field effect transistors. These devices utilize the proprietary QFET™ technology to minimize on-state resistance and provide superior switching performance. They are well suited for low voltage applications such as automotive systems, high efficiency switching for DC/DC converters, and DC motor control.
| Drain-Source Voltage | 80 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 12.9 A |
| Continuous Drain Current (Tg = 100°C) | 8.2 A |
| Pulsed Drain Current | 51.6 A |
| Total Gate Charge | 8.8 nC (Typ) |
| Reverse Transfer Capacitance | 29 pF (Typ) |
| Operating Temperature Range | -55 to +150 °C |
| Power Dissipation (Tg = 25°C) | 40 W |
These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
The typical gate charge is 8.8 nC.
The maximum continuous drain current at 25°C is 12.9 A.