This document describes the features and characteristics of the FQD16N25C 250V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 16A current, 0.27Ω RDS(on), low gate charge and low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FQD16N25C, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The FQD16N25C features a 250V drain-source voltage rating and 16A continuous current capability at 25°C. It is designed for high efficiency applications including DC/DC converters, switch mode power supplies, DC-AC converters, and motor controls.
| Drain-Source Voltage (VDSS) | 250 V |
|---|---|
| Continuous Drain Current (ID) @ TC=25°C | 16 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.27 ℧ @VGS = 10 V |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | D-PAK (TO-252) |
The typical total gate charge (Qg) is 41 nC.
It is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters, and motor controls.