This document describes the features and characteristics of the FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It uses advanced DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications, automotive, high efficiency DC/DC converters, and DC motor control.
The document describes the FQD18N20V2 and FQU18N20V2 N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 15 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 15 A when the junction temperature is 25°C.
Yes, the datasheet lists the device as RoHS Compliant.