This document describes the features and characteristics of the FQD13N06L / FQU13N06L 60V logic N-channel MOSFET products. These products are produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. They are well-suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild Semiconductor FQD13N06L and FQU13N06L, which are 60V Logic N-Channel enhancement mode power field effect transistors. These devices utilize the company's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for low voltage applications such as automotive systems, DC/DC converters, and power management in portable products.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (25°C) | 11 A |
| On-Resistance (VGS = 10 V) | 0.115 Ω |
| Gate Charge (Typical) | 4.8 nC |
| Maximum Junction Temperature | 175°C |
| Thermal Resistance (Junction-to-Case) | 4.5 °C/W |
The device supports a continuous drain current of 11 A when the case temperature is 25°C.
The absolute maximum junction temperature rating is 175° C.
The RDS(on) is 0.115 Ω at a gate-source voltage of 10 V.