This document describes the features and characteristics of products from a certain brand.
This document is a datasheet for the Fairchild Semiconductor FQD12N20 and FQU12N20 N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterruptible power supply, and motor control applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 9.0 A |
| Continuous Drain Current (Tc = 100°C) | 5.7 A |
| Pulsed Drain Current | 36 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 210 mJ |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 2.27 °C/W |