Key facts
- Brand
- STMicroelectronics
- Model
- STP6NC80Z
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ST STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5 - 5.4A TO-220/FP/D PAK/I PAK Zener-Protected PowerMESH III MOSFET handbook
Datasheet 13 pages · 443 KB · EN
The document describes the third generation of MESH OVERLAY™ Power MOSFETs featuring back-to-back Zener diodes between gate and source for enhanced ESD capability. These devices are designed for single-switch applications such as SMPS in monitors, computer, welding equipment, and industrial uses.
Read onlineSTMicroelectronics STP6NC80Z specifications
| Gate-source ESD (HBM) | 3 kV |
|---|---|
| Storage Temperature Range | -65 to 150 °C |
| Static Drain-source On Resistance (Typ) | 1.8 Ω |
All STMicroelectronics STP6NC80Z documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this MOSFET?
The device is suitable for single-ended SMPS in monitors, computer and industrial applications, as well as welding equipment.
What is the maximum junction temperature?
The maximum operating junction temperature (Tj) is 150 °C.