STP6NC80Z/FP is a N-channel MOSFET produced by STMicroelectronics. It has a maximum drain-source voltage of 800V, a typical on-resistance of 1.5Ω, and a maximum continuous drain current of 5.4A. The device is available in a TO-220/FP/D²PAK/I²PAK package.
The document describes the third generation of MESH OVERLAY™ Power MOSFETs featuring back-to-back Zener diodes between gate and source for enhanced ESD capability. These devices are designed for single-switch applications such as SMPS in monitors, computer, welding equipment, and industrial uses.
| Gate-source ESD (HBM) | 3 kV |
|---|---|
| Storage Temperature Range | -65 to 150 °C |
| Static Drain-source On Resistance (Typ) | 1.8 Ω |
The device is suitable for single-ended SMPS in monitors, computer and industrial applications, as well as welding equipment.
The maximum operating junction temperature (Tj) is 150 °C.