This document introduces the STP6NC80Z and STB6NC80Z series N-channel 800V power MOSFETs released on December 1, 2002. These MOSFETs feature a typical on-resistance of 1.5Ω, a current capability of 5.4A, extremely high dv/dt capability, and back-to-back Zener diodes between the gate and source. Additionally, they provide extra ESD capability and higher ruggedness performance through 100% avalanche testing and very low gate input resistance. The document also lists the absolute maximum ratings of this MOSFET series and the applicable application areas.
