Update: 28 September, 2023
This document introduces the STP6NC80Z and STB6NC80Z series N-channel 800V power MOSFETs released on December 1, 2002. These MOSFETs feature a typical on-resistance of 1.5Ω, a current capability of 5.4A, extremely high dv/dt capability, and back-to-back Zener diodes between the gate and source. Additionally, they provide extra ESD capability and higher ruggedness performance through 100% avalanche testing and very low gate input resistance. The document also lists the absolute maximum ratings of this MOSFET series and the applicable application areas.
File format: PDF
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MD5 Checksum: 099511E40004C05EB062492984ED54D5
Publication date: 07 June, 2012
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PDF Link: ST STP6NC80Z handbook PDF