IRF2807S IRF2807L HEXFET® Power MOSFET is a high-performance power device with extremely low on-resistance, high switching speed and ruggedized design. It is suitable for a wide range of applications, including automotive, industrial and consumer electronics applications.
This document provides technical specifications, electrical characteristics, and application information for the International Rectifier IRF2807S (surface mount) and IRF2807L (through-hole) power MOSFETs. These devices utilize Advanced Process Technology to achieve extremely low on-resistance per silicon area while maintaining fast switching speeds and ruggedized design suitable for a wide variety of applications.
The datasheet details absolute maximum ratings, electrical characteristics such as drain-to-source breakdown voltage and on-resistance, and source-drain ratings including body diode performance. It also includes graphical data on output characteristics, transfer characteristics, capacitance, safe operating areas, thermal impedance, and package outlines for both D2Pak (TO-262) and through-hole variants.
| Continuous Drain Current (25°C) | 82 A |
|---|---|
| Drain-to-Source Breakdown Voltage | 75 V |
| Static Drain-to-Source On-Resistance (Typ) | 13 mΩ |
| Operating Junction Temperature Range | -55 to +175 °C |
| Power Dissipation (25°C) | 230 W |
The maximum continuous drain current is 82 A when the temperature is 25°C.
The device can dissipate up to 2.0 W in a typical surface mount application.