The IRF2807 HEXFET® Power MOSFET is an efficient and reliable device with extremely low on-resistance and fast switching speed. It utilizes advanced processing techniques and is suitable for a wide range of applications.
This document is a datasheet for the International Rectifier IRF2807 HEXFET Power MOSFET. It describes the device as utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speed and a ruggedized design. The TO-220AB package is highlighted for its wide acceptance in commercial-industrial applications due to low thermal resistance and cost.
| Continuous Drain Current (25°C) | 82 A |
|---|---|
| Continuous Drain Current (100°C) | 58 A |
| Power Dissipation (25°C) | 230 W |
| Operating Junction Temperature | -55 to +175°C |
| Drain-to-Source Breakdown Voltage | 75 V |
| Static Drain-to-Source On-Resistance | 13 mΩ |
| Gate Threshold Voltage | 2.0 to 4.0 V |
| Package Type | TO-220AB |
The operating junction temperature range is from -55°C to +175°C.
The continuous drain current at 25°C is 82 A.
Yes, the device is fully avalanche rated with a maximum avalanche current of 43 A.