Key facts
- Brand
- AMD
- Model
- AM29LV001B
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-05-07
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AMD Am29LV001B Flash Memory Datasheet
Datasheet 38 pages · 208 KB · EN
The Am29LV001B is a 1 Mbit (128 K × 8‑bit) CMOS flash memory device that operates from a single 2.7 V‑3.6 V supply. It offers both full‑voltage (2.7‑3.6 V) and regulated (3.0‑3.6 V) operation, with access times as fast as 45 ns and low power consumption modes.
The device is available in 32‑pin TSOP and 32‑pin PLCC packages, supports sector‑based erase and protection, and provides up to 1 million write‑cycle endurance per sector. Detailed pin configurations, bus operations, and timing specifications are included for system designers.
AMD AM29LV001B specifications
| Memory capacity | 1 Mbit (128 K × 8‑bit) |
|---|---|
| Operating voltage (full range) | 2.7 V – 3.6 V |
| Operating voltage (regulated range) | 3.0 V – 3.6 V |
| Access time (fastest) | 45 ns |
| Access time (typical) | 55 ns |
| Read current | 7 mA |
| Program/erase current | 15 mA |
| Sleep mode current | 200 nA |
| Standby mode current | 200 nA |
| Endurance | ≥ 1 000 000 write cycles per sector |
| Temperature range (commercial) | 0 °C – +70 °C |
| Temperature range (extended) | -55 °C – +125 °C |
All AMD AM29LV001B documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
How many write‑erase cycles are guaranteed for each sector?
Each sector is guaranteed for at least 1 000 000 write‑erase cycles.
What is the typical standby current of the device?
The standby current is typically 200 nA.