The document describes the features and characteristics of the Am29LV001B 1 Megabit CMOS 3.0V-only Boot Sector Flash Memory, including single power supply operation, manufacturing process, high performance, ultra-low power consumption, and flexible sector architecture.
The Am29LV001B flash memory provides 1 Mbit (128 K × 8‑bit) storage in a single‑power‑supply device. It supports full voltage operation from 2.7 V to 3.6 V and a regulated range of 3.0 V to 3.6 V, making it suitable for battery‑powered and high‑performance microprocessor applications. Access times range from 45 ns to 90 ns, and the device offers ultra‑low power modes with 200 nA sleep and standby currents.
The memory is available in 32‑pin TSOP and 32‑pin PLCC packages and includes sector protection features, automatic sleep mode, and an unlock bypass programming mode for faster writes. It guarantees at least 1 000 000 write‑erase cycles per sector and operates across commercial, industrial, and extended temperature ranges.
| Memory capacity | 1 Mbit (128 K × 8‑bit) |
|---|---|
| Operating voltage (full range) | 2.7 V – 3.6 V |
| Operating voltage (regulated range) | 3.0 V – 3.6 V |
| Access time (fastest) | 45 ns |
| Access time (typical) | 55 ns |
| Read current | 7 mA |
| Program/erase current | 15 mA |
| Sleep mode current | 200 nA |
| Standby mode current | 200 nA |
| Endurance | ≥ 1 000 000 write cycles per sector |
| Temperature range (commercial) | 0 °C – +70 °C |
| Temperature range (extended) | -55 °C – +125 °C |
Each sector is guaranteed for at least 1 000 000 write‑erase cycles.
The standby current is typically 200 nA.