Key facts
- Brand
- AMD
- Model
- AM29DL800B
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-01
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AMD Am29DL800B Datasheet
The Am29DL800B is an 8‑Megabit CMOS flash memory device that operates from a single 3.0 V supply (2.7‑3.6 V range). It supports simultaneous read/write operations, zero‑latency access, and offers up to 1 million program/erase cycles per sector.
The device is available in 44‑pin SO, 48‑pin TSOP and 48‑ball FBGA packages. Detailed pin descriptions, bus operation timing, and sector protection features are provided, along with ordering information and revision history.
AMD AM29DL800B specifications
| Memory density | 8 Megabit (1 M × 8‑Bit / 512 K × 16‑Bit) |
|---|---|
| Supply voltage | 3.0 V only (2.7‑3.6 V range) |
| Access time | 70 ns (fast), 90 ns, 120 ns |
| Active read current (5 MHz) | 7 mA |
| Standby mode current | 200 nA |
| Package options | 44‑pin SO, 48‑pin TSOP, 48‑ball FBGA |
| Endurance | ≥ 1 000 000 program/erase cycles per sector |
Source: AMD Am29DL800B Datasheet
All AMD AM29DL800B documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What supply voltage does the Am29DL800B require?
It operates from a single 3.0 V supply with a full voltage range of 2.7 V to 3.6 V.
From: AMD Am29DL800B Datasheet
How many program/erase cycles are guaranteed per sector?
The device guarantees a minimum of 1 000 000 program/erase cycles per sector.
From: AMD Am29DL800B Datasheet
What voltage range does the Am29DL800B support?
It operates from 2.7 V to 3.6 V with a single 3.0 V supply.
How many program/erase cycles are guaranteed?
The device guarantees at least 1 million program/erase cycles per sector.