This document describes the features and characteristics of QFET products
The document describes the Fairchild FQS4901, a dual N-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. Key features include low on-state resistance (Ron), fast switching speeds, and improved dv/dt capability, making it suitable for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge configurations.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and package dimensions. It specifies a drain-source voltage of 400V, a continuous drain current of 0.45A at 25°C, and an operating temperature range from -55°C to +150°C.
| Continuous Drain Current (Ta = 25°C) | 0.45 A |
|---|---|
| Power Dissipation (Ta = 25°C) | 2.0 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient (Typ) | 62.5 °CAN |
The typical on-state resistance is 4.22 ohms at Vgs = 10V.
The typical total gate charge is 5.8 nC.