FQPF85N06 is a 60V N-Channel MOSFET produced by Fairchild. It has a maximum output current of 53A, a switch resistance of 0.010Ω, a gate charge of 86 nC and a parasitic capacitance of 165 pF, which is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild Semiconductor FQPF85N06, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for low voltage applications such as automotive systems, DC/DC converters, and high-efficiency switching in portable products.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 53 A |
| Pulsed Drain Current | 212 A |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-220F |
| Total Gate Charge (Typical) | 86 nC |
The device can operate and be stored within a temperature range of -55 to +175 °C.
The device can withstand a single pulsed avalanche energy of 820 mJ.