This document is the product manual of FQPF8N60CF 600V N-Channel MOSFET. It introduces the features and characteristics of the product, including current, voltage, switching speed, etc.
The document is a datasheet for the Fairchild FQPF8N60CF, an N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe DMOS technology, this device is designed for high-efficiency switched mode power supplies and active power factor correction applications. Key features include a 600V drain-source voltage rating, 6.26A continuous drain current, and low gate charge typical of 28 nC.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 6.26 A |
| Continuous Drain Current (Tj = 100°C) | 3.96 A |
| Pulsed Drain Current | 25 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 160 mJ |
| Power Dissipation (Tc = 25°C) | 48 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 26 °C/W |
| Package Type | TO-220F |
The typical gate charge is 28 nC.
The typical Crss is 12 pF.
Yes, the device is 100% avalanche tested.
The maximum lead temperature for soldering purposes is 300 °C.