Fairchild FQPF7P20 200V P-Channel MOSFET Datasheet

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Fairchild FQPF7P20 200V P-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
727 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
26CD562C33F604627B44DE9BD135F554

About this manual

The document describes the Fairchild FQPF7P20, a P-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. The device is optimized to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses in avalanche and commutation modes.

Key specifications include a drain-source voltage of -200V, a continuous drain current of -5.2A at 25°C, and an on-resistance (Rds(on)) of 0.692 Ohms at Vgs = -10V. The component is housed in a TO-220F package.

What's inside

  • General Description
  • Features
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Characteristics
  • Package Dimensions

Specifications

Drain-Source Voltage-200 V
Continuous Drain Current (Tj = 25°C)-5.2 A
Package TypeTO-220F
Operating Temperature Range-55 to +150 °C

Frequently asked questions

What is the primary application of this MOSFET?

These devices are well suited for high efficiency switching DC/DC converters.

Is the device avalanche tested?

Yes, the FQPF7P20 is 100% avalanche tested.

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