This datasheet provides the feature parameters of FQP9N25C/FQPF9N25C, including rated voltage, continuous current, switching frequency, gate voltage and on-state resistance.
This document is a technical datasheet for the Fairchild Semiconductor FQP9N25C and FQPF9N25C devices. These are N-Channel enhancement mode power field effect transistors produced using proprietary planar stripe, DMOS technology. The devices are designed to minimize on-state resistance while providing superior switching performance and withstanding high energy pulses in avalanche and commutation modes.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 8.8 A |
| On-Resistance (Vgs = 10 V) | 0.432 Ohms |
| Package Type | TO-220 / TO-220F |
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies, and motor controls.