The FQP8P10 is a 100V P-channel MOSFET from Fairchild with low on-state resistance, low gate charge and fast switching characteristics. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converter and DC motor control
This document is a datasheet for the Fairchild Semiconductor FQP8P10, a P-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | -100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -8.0 A |
| Continuous Drain Current (Tj = 100°C) | 5.7 A |
| Pulsed Drain Current | -32 A |
| Power Dissipation (Tj = 25°C) | 65 W |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Gate Threshold Voltage | -2.0 to -4.0 V |
The device is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The maximum junction temperature rating is 175°C.
Yes, the device is 100% avalanche tested.