FQP70N10 is a N-channel enhancement mode power field effect transistor manufactured by Fairchild Semiconductor International using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The document describes the Fairchild FQP70N10, an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe, DMOS technology. This device is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as audio amplifiers, high efficiency DC/DC converters, and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 57 A |
| On-Resistance | 0.023 Ohms |
| Maximum Junction Temperature | 175°C |
| Power Dissipation (Tj = 25°C) | 160 W |
The device supports a continuous drain current of 57 A at 25°C and 40.3 A at 100°C.
The maximum junction temperature rating for this MOSFET is 175°C.