This document describes the 800V N-Channel MOSFET products, FQP7N80C/FQPF7N80C. These products are produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are well suited for high efficiency switch mode power supplies.
This document is a datasheet for the Fairchild Semiconductor FQP7N80C and FQPF7N80C N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance, making them well-suited for high efficiency switch mode power supplies.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 6.6 A |
| On-State Resistance | 1.9 Ω |
| Gate Charge (Typical) | 27 nC |
| Reverse Transfer Capacitance (Typical) | 10 pF |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The maximum drain-source voltage is 800 V.
The continuous drain current is 6.6 A at a case temperature of 25°C.
The typical on-state resistance is 1.9 Ω at VGS = 10 V.