FQP7P06 is a P-channel MOSFET produced by Fairchild, which has low on-resistance, high switching speed, low gate charge and high dv/dt capability.
This document provides technical specifications and characteristics for the Fairchild FQP7P06, a 60V P-Channel MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for low voltage applications such as automotive systems and DC/DC converters.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | -7.0 A |
| Maximum Junction Temperature | +175 °C |
| Power Dissipation (Tj = 25°C) | 45 W |
| On-Resistance | 0.32 - 0.41 Ω |
The device supports a continuous drain current of -7.0 A at 25°C, which drops to -4.95 A at 100°C, with a pulsed rating of -28 A.
The MOSFET has a maximum junction temperature rating of 175°C.
At an ambient temperature of 25°C, the power dissipation is rated at 45 W.