This document describes the features and characteristics of the FQH44N10_F133 N-Channel MOSFET produced by Fairchild Semiconductor Corporation. The transistor is created using advanced DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulse in avalanche and commutation mode. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The document describes the Fairchild FQH44N10_F133, an N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 48 A |
| Maximum Junction Temperature | 175°C |
| Package Type | TO-247AB |
| On-State Resistance (Typical) | 0.039 Ω @ Vgs = 10V |
| Gate Charge (Typical) | 48 nC |
The device has a maximum junction temperature rating of 175°C.
Power dissipation must be derated by 1.2 W for every degree Celsius above 25°C.